| công cụ tìm kiếm bảng dữ liệu linh kiện điện tử |
|
L6738A bảng dữ liệu(PDF) 21 Page - STMicroelectronics |
|
|
|||||||||||||||||||||||||||||
L6738A bảng dữ liệu(HTML) 21 Page - STMicroelectronics |
|
21 / 32 page ![]() L6738A High Current embedded drivers Doc ID 18134 Rev 2 21/32 Two main terms contribute in the device power dissipation: bias power and drivers' power. ● Device Power (PDC) depends on the static consumption of the device through the supply pins and it is simply quantifiable as follows: ● Drivers' power is the power needed by the driver to continuously switch ON and OFF the external MOSFETs; it is a function of the switching frequency and total gate charge of the selected MOSFETs. It can be quantified considering that the total power PSW, dissipated to switch the MOSFETs, is dissipated by three main factors: external gate resistance (when present), intrinsic MOSFET resistance and intrinsic driver resistance. This last term is the important one to be determined to calculate the device power dissipation. The total power dissipated to switch the MOSFETs for each phase featuring embedded driver results: where QGHS is the total gate charge of the HS MOSFETs and QGLS is the total gate charge of the LS MOSFETs. P DC V CC I CC V VCCDR I VCCDR ⋅ + ⋅ = P SW F SW Q GHS VCCDR ⋅ Q GLS VCCDR ⋅ + () ⋅ = |
|
Link URL |
| Cho đến nay ALLDATASHEET có giúp ích cho doanh nghiệp của bạn hay không? [ DONATE ] |
Alldatasheet là | Quảng cáo | Liên lạc với chúng tôi | Chính sách bảo mật | Liên kết đến bảng dữ liệu | Trao đổi link | Tìm kiếm theo nhà sản xuất All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |