MMBF170L datasheet(2/5 Pages) ONSEMI

2 / 5 page

MMBF170L, NVBF170L

www.onsemi.com

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Drain−Source Breakdown Voltage (VGS = 0, ID = 100 mA)

V(BR)DSS

−

Vdc

Gate−Body Leakage Current, Forward (VGSF = 15 Vdc, VDS = 0)

IGSS

−

nAdc

ON CHARACTERISTICS (Note 1)

Gate Threshold Voltage (VDS = VGS, ID = 1.0 mA)

VGS(th)

0.8

3.0

Vdc

Static Drain−Source On−Resistance (VGS = 10 Vdc, ID = 200 mA)

rDS(on)

−

5.0

On−State Drain Current (VDS = 25 Vdc, VGS = 0)

ID(off)

−

0.5

DYNAMIC CHARACTERISTICS

Input Capacitance

(VDS = 10 Vdc, VGS = 0 V, f = 1.0 MHz)

Ciss

−

SWITCHING CHARACTERISTICS (Note 1)

Turn−On Delay Time

(VDD = 25 Vdc, ID = 500 mA, Rgen = 50 W)

Figure 1

td(on)

−

Turn−Off Delay Time

td(off)

−

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.

ORDERING INFORMATION

Device

Package

Shipping†

MMBF170LT1G

SOT−23 (TO−236)

(Pb−Free)

3000 / Tape & Reel

MMBF170LT3G

SOT−23 (TO−236)

(Pb−Free)

10000 / Tape & Reel

NVBF170LT1G*

SOT−23 (TO−236)

(Pb−Free)

3000 / Tape & Reel

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging

Specifications Brochure, BRD8011/D.

Figure 1. Switching Test Circuit

Figure 2. Switching Waveform

20 dB 50

ATTENUATOR

PULSE

GENERATOR

1 M

Vout

125

+25 V

40 pF

Vin

TO SAMPLING

SCOPE

W INPUT

PULSE WIDTH

50%

90%

50%

10%

90%

Vin

OUTPUT

INVERTED

INPUT

(Vin AMPLITUDE 10 VOLTS)

Vout

toff

td(off)

ton

td(on)

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