T635T-8T datasheet(5/9 Pages) STMICROELECTRONICS

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5 / 9 page

DocID024571 Rev 3

5/9

T635T-8T

Characteristics

Figure 13. Relative variation of leakage current versus junction temperature for different values of

blocking voltage (typical values)

Figure 11. Relative variation of critical rate of

decrease of main current (dI/dt)c versus

reapplied (dV/dt)c (typical values)

Figure 12. Relative variation of critical rate of

decrease of main current (dI/dt)c versus

junction temperature (typical values)

(dI/dt)c [(dV/dt)] / Specified (dI/dt)c

0.1

1.0

10.0

100.0

Tj =150 °C

(dV/dt)c (V/µs)

(dl / dt)c [Tj] / (dl / dt)c [Tj = 150 °C]

100

125

150

T (°C)

, I

@ [T ]; V

, V

] / I

, I

DRM RRM

DRM

RRM

DRM RRM @ [ jmax]*

1.0E-04

1.0E-03

1.0E-02

1.0E-01

1.0E+00

100

125

150

DRM=VRRM=800 V

DRM=VRRM=600 V

DRM=VRRM=400 V

T (°C)

[Tjmax = 125 °C; 800 V]

[Tjmax = 150 °C; 600 V]

*IDRM, IRRM @:

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