STW12N150K5

Electrical characteristics

DocID027833 Rev 3

5/13

Table 7: Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Turn-on delay

time

(see Figure 18: "Unclamped inductive

load test circuit")

-

25

-

ns

Rise time

-

8

-

ns

Turn-off delay

time

-

90

-

ns

Fall time

-

37

-

ns

Table 8: Source drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Source-drain

current

-

7

A

Source-drain

current (pulsed)

-

28

A

VSD

(1)

Forward on

voltage

-

1.5

V

Reverse recovery

time

di/dt = 100 A/µs,

(see Figure 17: "Test circuit for

inductive load switching and diode

recovery times")

-

302

ns

Reverse recovery

charge

-

3.71

µC

Reverse recovery

current

-

24.6

A

Reverse recovery

time

di/dt = 100 A/µs,

Tj = 150 °C

(see Figure 17: "Test circuit for

inductive load switching and diode

recovery times")

-

432

ns

Reverse recovery

charge

-

4.71

µC

Reverse recovery

current

-

21.8

A

Notes:

(1)

Pulsed: pulse duration = 300µs, duty cycle 1.5%

Table 9: Gate-source Zener diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)GSO

Gate-source breakdown voltage

30

-

V

The built-in back-to-back Zener diodes have been specifically designed to enhance the

ESD capability of the device. The Zener voltage is appropriate for efficient and cost-

effective intervention to protect the device integrity. These integrated Zener diodes thus

eliminate the need for external components.