STT5N2VH5 datasheet(4/13 Pages) STMICROELECTRONICS

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Electrical characteristics

STT5N2VH5

4/13

DocID026116 Rev 1

Electrical characteristics

= 25 °C unless otherwise specified)

Table 4. On /off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

(BR)DSS

Drain-source

breakdown voltage

= 1 mA, V

= 0

DSS

Zero gate voltage

drain current (V

= 0)

= 20 V

μA

= 20 V, T

=125 °C

μA

GSS

Gate-body leakage

current (V

= 0)

= ± 8 V

± 100

GS(th)

Gate threshold voltage

= V

, I

= 250 μA0.7

DS(on)

Static drain-source

on-resistance

= 4.5 V, I

= 2 A

0.025

0.03

= 2.5 V, I

= 2 A

0.031

0.04

Table 5. Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

iss

Input capacitance

= 16 V, f = 1 MHz,

= 0

367

oss

Output capacitance

rss

Reverse transfer

capacitance

-16

Total gate charge

= 16 V, I

= 2 A,

= 4.5 V

(see

Figure 14)

-4.6

Gate-source charge

0.9

Gate-drain charge

Table 6. Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

d(on)

Voltage delay time

= 16 V, I

= 2 A,

= 4.7

Ω, V

= 4.5 V

(see

Figure 15 and Figure 18)

-4.8

r (V)

Voltage rise time

14.4

d (off)

Current fall time

Crossing time

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