STS10DN3LH5 datasheet(1/13 Pages) STMICROELECTRONICS

tên linh kiện	STS10DN3LH5

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May 2009

Doc ID 15624 Rev 1

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STS10DN3LH5

Dual N-channel 30 V, 0.019

Ω, 10 A, SO-8

STripFET™ V Power MOSFET

■ RDS(on) * Qg industry benchmark

■ Extremely low on-resistance RDS(on)

■ Very low switching gate charge

■ High avalanche ruggedness

■ Low gate drive power losses

Application

■ Switching applications

Description

This STripFET™V Power MOSFET technology is

among the latest improvements, which have been

especially tailored to achieve very low on-state

resistance providing also one of the best-in-class

FOM.

Figure 1.

Internal schematic diagram

Features

Type

VDSS

RDS(on) max

ID

STS10DN3LH5

30 V

0.021

Ω

10 A

SO-8

Table 1.

Device summary

Order codes

Marking

Package

Packaging

STS10DN3LH5

10DD3L

SO-8

Tape and reel

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