DocID024437 Rev 2

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STS3P6F6

Electrical characteristics

Note:

For the P-channel Power MOSFET actual polarity of voltages and current has to be

reversed.

Table 7. Source drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max. Unit

Source-drain current

-

3

A

(1)

1. Pulse width limited by safe operating area.

Source-drain current (pulsed)

-

12

A

(2)

2. Pulse duration = 300 µs, duty cycle 1.5%

Forward on voltage

-

1.1

V

Reverse recovery time

(see Figure 15)

-20

ns

Reverse recovery charge

-

17.8

nC

Reverse recovery current

-

1.8

A