STL100N6LF6 datasheet(4/15 Pages) STMICROELECTRONICS

tên linh kiện	STL100N6LF6

Giải thích chi tiết về linh kiện	N-channel 60 V, 3.3 mΩ typ., 25 A STripFET™ VI DeepGATE™ Power MOSFET in a PowerFLAT™ 5x6 package

PDF	15 Pages

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Electrical characteristics

STL100N6LF6

4/15

DocID018491 Rev 3

Electrical characteristics

= 25 °C unless otherwise specified)

Table 5. On/off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

(BR)DSS

Drain-source breakdown

voltage

= 1 mA, V

= 0

DSS

Zero gate voltage drain

current (V

= 0)

= 60 V

μA

= 60 V, T

=125 °C

μA

GSS

Gate body leakage current

= 0)

= ±20 V

±100

GS(th)

Gate threshold voltage

= V

, I

= 250 μA1

2.5

DS(on)

Static drain-source on-

resistance

= 10 V, I

= 11 A

3.3

4.4

= 4.5 V, I

= 11 A

4.3

5.5

Table 6. Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

iss

Input capacitance

=25 V, f = 1 MHz,

= 0

-6600

oss

Output capacitance

670

rss

Reverse transfer

capacitance

315

Total gate charge

= 30 V, I

= 20 A

=10 V

(see

Figure 14)

121

Gate-source charge

Gate-drain charge

Gate input resistance

f=1 MHz Gate DC Bias=0

test signal level=20 mV

-1.2

Table 7. Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

d(on)

Turn-on delay time

= 30 V, I

= 20A,

=4.7

Ω, V

=10 V

(see

Figure 13)

-20

Rise time

d(off)

Turn-off delay time

108

Fall time

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