STL31N65M5 datasheet(1/17 Pages) STMICROELECTRONICS

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This is information on a product in full production.

October 2013

DocID025459 Rev 1

1/17

STL31N65M5

N-channel 650 V, 0.135

Ω typ., 15 A MDmesh™ V

Power MOSFET in a PowerFLAT™ 8x8 HV package

Datasheet

- production data

Figure 1. Internal schematic diagram

Features

• Worldwide best RDS(on) * area

• Higher VDSS rating and high dv/dt capability

• Excellent switching performance

Applications

• Switching applications

Description

This device is an N-channel MDmesh™ V Power

MOSFET based on an innovative proprietary

vertical process technology, which is combined

with STMicroelectronics’ well-known

PowerMESH™ horizontal layout structure. The

resulting product has extremely low on-

resistance, which is unmatched among silicon-

based Power MOSFETs, making it especially

suitable for applications which require superior

power density and outstanding efficiency.

Order code

VDS

RDS(on) max

ID

STL31N65M5

710 V

0.162

Ω

15 A(1)

1.

The value is rated according to Rthj-case and limited by

package.

Table 1. Device summary

Order code

Marking

Packages

Packaging

STL31N65M5

31N65M5

PowerFLAT™ 8x8 HV

Tape and reel

www.st.com

Số phần tương tự - STL31N65M5

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	STL30N10F7	1Mb / 15P	Ultra low on-resistance 22-Oct-2013
	STL30NF3LL	169Kb / 6P	N-CHANNEL 30V - 0.008ohm - 30A PowerFLAT™ LOW GATE CHARGE STripFET™ MOSFET Nov-2001
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