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STGIPQ3H60T-HZ bảng dữ liệu(PDF) 5 Page - STMicroelectronics

tên linh kiện STGIPQ3H60T-HZ
Giải thích chi tiết về linh kiện  SLLIMM™ nano - 2 nd series IPM, 3 A, 600 V, 3-phase IGBT inverter bridge
PDF  26 Pages
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nhà sản xuất  STMICROELECTRONICS [STMicroelectronics]
Trang chủ  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STGIPQ3H60T-HZ bảng dữ liệu(HTML) 5 Page - STMicroelectronics

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STGIPQ3H60T-HL, STGIPQ3H60T-HZ
Electrical ratings
DocID027219 Rev 5
5/26
2
Electrical ratings
2.1
Absolute maximum ratings
Table 3: Inverter part
Symbol
Parameter
Value
Unit
VCES
Collector-emitter voltage each IGBT (VIN(1)= 0 V)
600
V
IC
Continuous collector current each IGBT
3
A
ICP(2)
Peak collector current each IGBT (less than 1 ms)
6
A
PTOT
Total dissipation at TC=25 °C each IGBT
12
W
Notes:
(1)Applied among HINx, LINx and GND for x = U, V, W.
(2)Pulse width limited by max. junction temperature.
Table 4: Control part
Symbol
Parameter
Min.
Max.
Unit
VCC
Low voltage power supply
- 0.3
21
V
Vboot
Bootstrap voltage
- 0.3
620
V
VOUT
Output voltage applied among OUTU, OUTV, OUTW -
GND
Vboot - 21
Vboot + 0.3
V
VCIN
Comparator input voltage
- 0.3
VCC + 0.3
V
Vop+
Op-amp non-inverting input
- 0.3
VCC + 0.3
V
Vop-
Op-amp inverting input
- 0.3
VCC + 0.3
V
VIN
Logic input voltage applied among HINx, LINx and
GND
- 0.3
15
V
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Open-drain voltage
- 0.3
15
V
∆VOUT/dT
Allowed output slew rate
50
V/ns
Table 5: Total system
Symbol
Parameter
Value
Unit
VISO
Isolation withstand voltage applied to each pin and
heatsink plate (AC voltage, t = 60 s)
1500
V
Tj
Power chip operating junction temperature
-40 to 150
°C
TC
Module case operation temperature
-40 to 125
°C



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