STGWA40H65DFB datasheet(1/17 Pages) STMICROELECTRONICS

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June 2016

DocID029398 Rev 1

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This is information on a product in full production.

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STGWA40H65DFB

Trench gate field-stop IGBT, HB series 650 V, 40 A high speed

Datasheet - production data

Figure 1: Internal schematic diagram

Features



Maximum junction temperature: TJ = 175 °C



High speed switching series



Minimized tail current



Low saturation voltage: VCE(sat) = 1.6 V (typ.)

@ IC = 40 A



Tight parameter distribution



Safe paralleling



Low thermal resistance



Very fast soft recovery antiparallel diode

Applications



Photovoltaic inverters



High frequency converters

Description

This device is an IGBT developed using an

advanced proprietary trench gate field-stop

structure. The device is part of the new HB series

of IGBTs, which represents an optimum

compromise between conduction and switching

loss to maximize the efficiency of any frequency

converter. Furthermore, the slightly positive

VCE(sat) temperature coefficient and very tight

parameter distribution result in safer paralleling

operation.

Table 1: Device summary

Order code

Marking

Package

Packing

STGWA40H65DFB

G40H65DFB

TO-247 long leads

Tube

Số phần tương tự - STGWA40H65DFB

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
STMicroelectronics	STGWA40H65FB	1Mb / 21P	Trench gate field-stop IGBT, HB series 650 V, 40 A high speed 21-Mar-2017

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