STGW60V60F datasheet(1/14 Pages) STMICROELECTRONICS

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This is information on a product in full production.

February 2014

DocID024701 Rev 2

1/14

14

STGW60V60F

Trench gate field-stop IGBT, V series

600 V, 60 A very high speed

Datasheet - production data

Figure 1. Internal schematic diagram

Features

• Maximum junction temperature: T

J

= 175 °C

• Tail-less switching off

• V

CE(sat)

= 1.85 V (typ.) @ I

C

= 60 A

• Tight parameters distribution

• Safe paralleling

• Low thermal resistance

• Lead free package

Applications

• Photovoltaic inverters

• Uninterruptible power supply

• Welding

• Power factor correction

• Very high frequency converters

Description

This device is an IGBT developed using an

advanced proprietary trench gate field stop

structure. The device is part of the V series of

IGBTs, which represent an optimum compromise

between conduction and switching losses to

maximize the efficiency of very high frequency

converters. Furthermore, a positive V

CE(sat)

temperature coefficient and very tight parameter

distribution result in safer paralleling operation.

TO-247

1

2

3

Table 1. Device summary

Order code

Marking

Package

Packaging

STGW60V60F

GW60V60F

TO-247

Tube

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Số phần tương tự - STGW60V60F

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
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	STGW60V60DF	1Mb / 20P	Trench gate field-stop IGBT, V series 600 V, 60 A very high speed 28-Sep-2016
	STGW60V60DF	1Mb / 20P	Trench gate field-stop IGBT, V series 600 V, 60 A very high speed 28-Sep-2016

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