STGWA60H65DFB datasheet(1/19 Pages) STMICROELECTRONICS

tên linh kiện	STGWA60H65DFB

Giải thích chi tiết về linh kiện	Low thermal resistance

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1 / 19 page

This is information on a product in full production.

April 2015

DocID024365 Rev 7

1/19

19

STGW60H65DFB, STGWA60H65DFB

STGWT60H65DFB

Trench gate field-stop IGBT, HB series

650 V, 60 A high speed

Datasheet

- production data

Figure 1. Internal schematic diagram

Features

• Maximum junction temperature: TJ = 175 °C

• High speed switching series

• Minimized tail current

• VCE(sat) = 1.6 V (typ.) @ IC = 60 A

• Tight parameters distribution

• Safe paralleling

• Low thermal resistance

• Very fast soft recovery antiparallel diode

Applications

• Photovoltaic inverters

• High frequency converters

Description

These are IGBT devices developed using an

advanced proprietary trench gate and field-stop

structure. The devices are part of the new HB

series of IGBTs, which represent an optimum

compromise between conduction and switching

losses to maximize the efficiency of any

frequency converter. Furthermore, a slightly

positive VCE(sat) temperature coefficient and very

tight parameter distribution result in safer

paralleling operation.

G (1)

E (3)

C (2, TAB)

TO-247

1

2

3

TO-3P

1

2

3

TAB

TO-247 long leads

Table 1. Device summary

Order code

Marking

Package

Packing

STGW60H65DFB

GW60H65DFB

TO-247

Tube

STGWA60H65DFB

G60H65DFB

TO-247 long leads

Tube

STGWT60H65DFB

GWT60H65DFB

TO-3P

Tube

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nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
STMicroelectronics	STGWA60H65DFB	689Kb / 21P	Trench gate field-stop 650 V, 60 A high speed HB series IGBT 22-Jul-2019

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