STGWA35HF60WDI datasheet(1/15 Pages) STMICROELECTRONICS

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Giải thích chi tiết về linh kiện	35 A, 600 V ultrafast IGBT with low drop diode

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August 2011

Doc ID 16090 Rev 3

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STGW35HF60WDI

35 A, 600 V ultrafast IGBT with low drop diode

Features

■ Improved Eoff at elevated temperature

■ Low CRES / CIES ratio (no cross-conduction

susceptibility)

■ Low VF soft recovery antiparallel diode

Applications

■ Welding

■ Induction heating

■ Resonant converters

Description

This ultrafast IGBT is developed using a new

planar technology to yield a device with tighter

switching energy variation (Eoff) versus

temperature. The suffix "W" denotes a subset of

products designed for high switching frequency

operation (over 100 kHz).

Figure 1.

Internal schematic diagram

TO-247

1

2

3

Table 1.

Device summary

Order code

Marking

Package

Packaging

STGW35HF60WDI

GW35HF60WDI

TO-247

Tube

STGWA35HF60WDI

35HF60WDI

TO-247 long leads

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