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STGP30M65DF2 bảng dữ liệu(PDF) 1 Page - STMicroelectronics

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April 2017
DocID027355 Rev 3
1/16
This is information on a product in full production.
www.st.com
STGP30M65DF2
Trench gate field-stop IGBT, M series 650 V, 30 A
low-loss in a TO-220 package
Datasheet - production data
Figure 1: Internal schematic diagram
Features
6 µs of minimum short-circuit withstand time
VCE(sat) = 1.55 V (typ.) @ IC = 30 A
Tight parameters distribution
Safer paralleling
Low thermal resistance
Soft and very fast recovery antiparallel diode
Applications
Motor control
UPS
PFC
Description
This device is an IGBT developed using an
advanced proprietary trench gate field-stop
structure. The device is part of the M series of
IGBTs, which represent an optimum compromise
in performance to maximize the efficiency of
inverter systems where low-loss and short-circuit
capability are essential. Furthermore, a positive
VCE(sat) temperature coefficient and tight
parameter distribution result in safer paralleling
operation.
Table 1: Device summary
Order code
Marking
Package
Packaging
STGP30M65DF2
G30M65DF2
TO-220
Tube
1
2
3
TO-220
TAB


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