STGP30V60DF datasheet(6/22 Pages) STMICROELECTRONICS

tên linh kiện	STGP30V60DF

Giải thích chi tiết về linh kiện	Low thermal resistance

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Electrical characteristics

STGB30V60DF, STGP30V60DF, STGW30V60DF, STGWT30V60DF

6/22

DocID024361 Rev 4

Figure 8. Collector current vs. switching

frequency

Figure 9. Forward bias safe operating area

Figure 10. Transfer characteristics

Figure 11. Diode VF vs. forward current

Figure 12. Normalized VGE(th) vs junction

temperature

Figure 13. Normalized V(BR)CES vs. junction

temperature

(A)

f(kHz)

TC=80°C

TC=100°C

rectangular current shape,

(duty cycle=0.5, Vcc= 400V Rg=10Ω,

Vge=0/15V, Tj=175 °C)

AM17415v1

100

0.1

0.01

(A)

VCE(V)

10μs

100μs

1ms

100

Single pulse, Tc=25°C

Tj<175°C, VGE=15V

AM17416v1

(A)

VGE(V)

Tj=175°C

Tj=25°C

Tj=-40°C

100

AM17417v1

1.9

1.1

(A)

IF(A)

1.5

Tj=175°C

Tj=25°C

Tj=-40°C

2.3

AM17418v1

VGE(th)

0.8

0.6

-50

(norm)

TC(°C)

0.7

0.9

1.0

100

150

VCE=VGE

IC=1mA

AM17419v1

V(BR)CES

1.1

0.9

-50

(norm)

TC(°C)

1.0

100

150

IC=2mA

AM17420v1

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