STGF10H60DF datasheet(4/24 Pages) STMICROELECTRONICS

tên linh kiện	STGF10H60DF

Giải thích chi tiết về linh kiện	Trench gate field-stop IGBT, H series 600 V, 10 A high speed

PDF	24 Pages

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nhà sản xuất	STMICROELECTRONICS [STMicroelectronics]

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Electrical characteristics

STGB10H60DF, STGF10H60DF, STGP10H60DF

4/24

DocID025111 Rev 2

Electrical characteristics

= 25 °C unless otherwise specified.

Table 4. Static

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

(BR)CES

Collector-emitter

breakdown voltage

= 0)

= 2 mA

600

CE(sat)

Collector-emitter saturation

voltage

= 15 V, I

= 10 A

1.5

1.95

= 15 V, I

= 10 A

= 125 °C

1.65

= 15 V, I

= 10 A

= 175 °C

1.7

GE(th)

Gate threshold voltage

= V

, I

= 1 mA

5.0

6.0

7.0

CES

Collector cut-off current

= 0)

= 600 V

μA

GES

Gate-emitter leakage

current (V

= 0)

= ± 20 V

250

Table 5. Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

ies

Input capacitance

= 25 V, f = 1 MHz,

= 0

-1300

oes

Output capacitance

res

Reverse transfer

capacitance

-30

Total gate charge

= 480 V, I

= 10 A,

= 15 V

-57

Gate-emitter charge

Gate-collector charge

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