STPLED627 datasheet(5/15 Pages) STMICROELECTRONICS

5 / 15 page

DocID025170 Rev 1

5/15

STFILED627, STPLED627

Electrical characteristics

The built-in back-to-back Zener diodes have specifically been designed to enhance not only

the device’s ESD capability, but also to make them safely absorb possible voltage transients

that may occasionally be applied from gate to source. In this respect the Zener voltage is

appropriate to achieve an efficient and cost-effective intervention to protect the device’s

integrity. These integrated Zener diodes thus avoid the usage of external components.

Table 6. Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max. Unit

td(on)

Turn-on delay time

VDD = 310 V, ID = 2.75 A,

RG = 4.7 Ω, VGS = 10 V

(see Figure 17)

-22

Rise time

td(off)

Turn-off-delay time

Fall time

Table 7. Source-drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max. Unit

ISD

Source-drain current

5.5

ISDM

(1)

Pulse width limited by safe operating area.

Source-drain current (pulsed)

VSD

(2)

Pulsed: pulse duration = 300 µs, duty cycle 1.5%.

Forward on voltage

ISD = 5.5 A, VGS = 0

1.5

trr

Reverse recovery time

ISD = 5.5 A, di/dt = 100 A/µs

VDD = 60 V (see Figure 22)

-290

Qrr

Reverse recovery charge

1.9

µC

IRRM

Reverse recovery current

13.5

trr

Reverse recovery time

ISD = 5.5 A, di/dt = 100 A/µs

VDD = 60 V, Tj = 150 °C

(see Figure 22)

-335

Qrr

Reverse recovery charge

2.4

µC

IRRM

Reverse recovery current

14.5

Table 8. Gate-source Zener diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max. Unit

V(BR)GSO

Gate-source breakdown

voltage (ID = 0)

Igs = ± 1 mA

Obsolete

Product(s)

- Obsolete

Product(s)

STPLED627 bảng dữ liệu(PDF) 5 Page - STMicroelectronics

STPLED627 bảng dữ liệu(HTML) 5 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15

bảng dữ liệu tải về

Link URL