STP34NM60N datasheet(4/17 Pages) STMICROELECTRONICS

4 / 17 page

Electrical characteristics

STB34NM60N, STP34NM60N

4/17

DocID17740 Rev 9

Electrical characteristics

(TCASE = 25 °C unless otherwise specified).

Table 4. On/off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown

voltage (VGS= 0)

ID = 1 mA

600

IDSS

Zero gate voltage drain

current (VGS = 0)

VDS = 600 V

VDS = 600 V, Tc=125 °C

100

µA

IGSS

Gate body leakage current

(VDS = 0)

VGS = ± 25 V

±100

VGS(th)

Gate threshold voltage

VDS = VGS, ID = 250 µA

RDS(on)

Static drain-source on-

resistance

VGS = 10 V, ID= 14.5 A

0.092 0.105

Table 5. Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Input capacitance

VDS =100 V, f=1 MHz, VGS=0

2722

Coss

Output capacitance

173

Crss

Reverse transfer

capacitance

-1.75

Coss eq.

(1)

Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS

increases from 0 to 80% VDSS

Equivalent capacitance time

VGS = 0, VDS = 0 to 480 V

458

td(on)

Turn-on delay time

VDD = 300 V, ID = 15.75 A,

RG=4.7 Ω, VGS=10 V

(see Figure 19 and 14)

-18

Rise time

td(off)

Turn-off delay time

104

Fall time

Total gate charge

VDD = 480 V, ID = 31.5 A

VGS =10 V

(see Figure 15)

-84

Qgs

Gate-source charge

Qgd

Gate-drain charge

Intrinsic gate resistance

f = 1 MHz, gate DC Bias=0

test signal level=20 mV

open drain

-2.9

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