STP6N52K3 datasheet(1/22 Pages) STMICROELECTRONICS

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March 2011

Doc ID 14994 Rev 2

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STB6N52K3, STD6N52K3

STF6N52K3, STP6N52K3

N-channel 525 V, 1

Ω, 5 A, D²PAK, DPAK, TO-220FP, TO-220

SuperMESH3™ Power MOSFET

Features

■ 100% avalanche tested

■ Extremely high dv/dt capability

■ Gate charge minimized

■ Very low intrinsic capacitance

■ Improved diode reverse recovery

characteristics

■ Zener-protected

Application

Switching applications

Description

These devices are made using the

SuperMESH3™ Power MOSFET technology that

is obtained via improvements applied to

STMicroelectronics’ SuperMESH™ technology

combined with a new optimized vertical structure.

The resulting product has an extremely low on

resistance, superior dynamic performance and

high avalanche capability, making it especially

suitable for the most demanding applications.

Figure 1.

Internal schematic diagram

Order codes

VDSS

RDS(on)

max

ID

Pw

STB6N52K3

525 V

< 1.2

Ω

5 A

70 W

STD6N52K3

5 A(1)

1.

Limited by package

25 W

STF6N52K3

5 A

70 W

STP6N52K3

1

3

DPAK

TO-220FP

1

2

3

1

2

3

TO-220

1

3

D²PAK

D(2)

G(1)

S(3)

AM01476v1

Table 1.

Device summary

Order codes

Marking

Package

Packaging

STB6N52K3

6N52K3

D²PAK

Tape and reel

STD6N52K3

DPAK

STF6N52K3

TO-220FP

Tube

STP6N52K3

TO-220

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Số phần tương tự - STP6N52K3

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