Preliminary data

This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to

change without notice.

February 2011

Doc ID 010019 Rev 1

1/11

11

LET9060

RF power transistor, LdmoST plastic family

N-channel enhancement-mode lateral MOSFETs

Features

28 V

Description

The LET9060 is a common source N-channel,

enhancement-mode lateral field-effect RF power

MOSFET. It is designed for high gain, broadband,

commercial and industrial applications. It

operates at 28 V in common source mode at

frequencies of up to 1 GHz. LET9060 boasts the

excellent gain, linearity and reliability of ST’s

latest LDMOS technology mounted in the first true

SMD plastic RF power package, PowerSO-10RF.

LET9060’s superior linearity performance makes

it an ideal solution for base station applications.

The PowerSO-10 plastic package, designed to

offer high reliability, is the first ST JEDEC

approved, high power SMD package. It has been

specially optimized for RF needs and offers

excellent RF performances and ease of assembly.

Figure 1.

Pin connection

PowerSO-10RF

(formed lead)

PowerSO-10RF

(straight lead)

Gate

Source

Drain

Table 1.

Device summary

Order codes

Packages

Marking

Packaging

LET9060

PowerSO-10RF (formed lead)

LET9060

Tube

LET9060S

PowerSO-10RF (straight lead)

LET9060S

Tube

LET9060TR

PowerSO-10RF (formed lead)

LET9060

Tape and reel

LET9060STR

PowerSO-10RF (straight lead)

LET9060S

Tape and reel

www.st.com