RN2102 datasheet(1/7 Pages) TOSHIBA

tên linh kiện	RN2102

Giải thích chi tiết về linh kiện	TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)

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nhà sản xuất	TOSHIBA [Toshiba Semiconductor]

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RN2101

~RN2106

2001-06-07

1

Type No.

R1 (kΩ)

R2 (kΩ)

RN2101

4.7

RN2102

10

RN2103

22

RN2104

47

RN2105

2.2

47

RN2106

4.7

47

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)

RN2101,RN2102,RN2103

RN2104,RN2105,RN2106

Switching, Inverter Circuit, Interface Circuit

And Driver Circuit Applications

l With built-in bias resistors

l Simplify circuit design

l Reduce a quantity of parts and manufacturing process

l Complementary to RN1101~RN1106

Equivalent Circuit and Bias Resister Values

Maximum Ratings (Ta = 25°C)

Characteristic

Symbol

Rating

Unit

Collector-base voltage

VCBO

−50

V

Collector-emitter voltage

RN2101~2106

VCEO

−50

V

RN2101~2104

−10

Emitter-base voltage

RN2105, 2106

VEBO

−5

V

Collector current

IC

−100

mA

Collector power dissipation

PC

100

mW

Junction temperature

Tj

150

°C

Storage temperature range

RN2101~2106

Tstg

−55~150

°C

JEDEC

―

EIAJ

―

TOSHIBA

2-2H1A

Weight: 2.4mg

Unit: mm

Số phần tương tự - RN2102

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
Toshiba Semiconductor	RN2102	572Kb / 8P	Silicon PNP Epitaxial Type (PCT Process) Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications
	RN2102	559Kb / 8P	Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications
	RN2102ACT	196Kb / 8P	Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications
	RN2102CT	195Kb / 8P	Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications
	RN2102MFV	206Kb / 8P	Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications

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Mô tả tương tự - RN2102

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