DocID025280 Rev 2

5/18

STF15N95K5, STP15N95K5, STW15N95K5

Electrical characteristics

The built-in back-to-back Zener diodes have specifically been designed to enhance not only

the device’s ESD capability, but also to make them safely absorb possible voltage transients

that may occasionally be applied from gate to source. In this respect the Zener voltage is

appropriate to achieve an efficient and cost-effective intervention to protect the device’s

integrity. These integrated Zener diodes thus avoid the usage of external components.

Table 6. Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

t

d(v)

Voltage delay time

V

DD

= 475 V, I

D

= 6 A,

R

G

=4.7

Ω, V

GS

=10 V

(see Figure 22)

-23-

ns

t

r(v)

Voltage rise time

-

20

-

ns

t

f(i)

Current fall time

-

62

-

ns

t

c(off)

Crossing time

-

11

-

ns

Table 7. Source drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

I

SD

I

SDM

Source-drain current

Source-drain current (pulsed)

-

12

48

A

A

V

SD

(1)

1.

Pulsed: pulse duration = 300μs, duty cycle 1.5%

Forward on voltage

I

SD

= 12 A, V

GS

=0

-

1.5

V

t

rr

Reverse recovery time

I

SD

= 12 A, V

DD

= 60 V

di/dt = 100 A/μs,

(see Figure 21)

-

444

ns

Q

rr

Reverse recovery charge

-

7

μC

I

RRM

Reverse recovery current

-

32

A

t

rr

Reverse recovery time

I

SD

= 12 A,V

DD

= 60 V

di/dt=100 A/μs,

Tj=150 °C

(see

Figure 21)

-

630

ns

Q

rr

Reverse recovery charge

-

9.2

μC

I

RRM

Reverse recovery current

-

29

A

Table 8. Gate-source Zener diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V

(BR)GSO

Gate-source breakdown voltage

I

GS

= ± 1 mA, I

D

= 0

30

-

-

V