STDLED625 datasheet(5/18 Pages) STMICROELECTRONICS

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DocID025167 Rev 1

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STDLED625, STULED625

Electrical characteristics

The built-in back-to-back Zener diodes have been specifically designed to enhance not only

the device’s ESD capability, but also to make them capable of safely absorbing any voltage

transients that may occasionally be applied from gate to source. In this respect, the Zener

voltage is appropriate to achieve efficient and cost-effective protection of device integrity.

The integrated Zener diodes thus eliminate the need for external components.

Table 6. Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td(on)

Turn-on delay time

VDD = 310 V, ID = 2.75 A,

RG = 4.7 Ω, VGS = 10 V

(see Figure 15)

-22

Rise time

td(off)

Turn-off-delay time

Fall time

Table 7. Source-drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max. Unit

ISD

Source-drain current

5.5

ISDM

(1)

Pulse width limited by safe operating area.

Source-drain current (pulsed)

VSD

(2)

Pulsed: pulse duration = 300 µs, duty cycle 1.5%.

Forward on voltage

ISD = 5.5 A, VGS = 0

1.5

trr

Reverse recovery time

ISD = 5.5 A, di/dt = 100 A/µs

VDD = 60 V (see Figure 18)

-290

Qrr

Reverse recovery charge

1900

IRRM

Reverse recovery current

13.5

trr

Reverse recovery time

ISD = 5.5 A, di/dt = 100 A/µs

VDD = 60 V, Tj = 150 °C

(see Figure 18)

-335

Qrr

Reverse recovery charge

2400

IRR

Reverse recovery current

14.5

Table 8. Gate-source Zener diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max. Unit

V(BR)GSO

Gate-source breakdown

voltage

IGS = ± 1 mA, ID = 0

Obsolete

Product(s)

- Obsolete

Product(s)

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