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STP42N60M2-EP bảng dữ liệu(PDF) 5 Page - STMicroelectronics

tên linh kiện STP42N60M2-EP
Giải thích chi tiết về linh kiện  N-channel 600 V, 0.076 Ω typ., 34 A MDmesh™ M2 EP Power MOSFETs in D²PAK, TO-220 and TO-247 packages
PDF  20 Pages
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nhà sản xuất  STMICROELECTRONICS [STMicroelectronics]
Trang chủ  http://www.st.com
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STP42N60M2-EP bảng dữ liệu(HTML) 5 Page - STMicroelectronics

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STB42N60M2-EP, STP42N60M2-EP,
STW42N60M2-EP
Electrical characteristics
DocID027327 Rev 1
5/20
Table 8: Switching times
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
td(on)
Turn-on delay time
VDD = 300 V, ID = 17 A,
RG = 4.7
Ω, VGS = 10 V
(see Figure 17: "Switching
times test circuit for
resistive load" and Figure
22: "Switching time
waveform" )
-
16.5
-
ns
tr
Rise time
-
9.5
-
ns
td(off)
Turn-off-delay time
-
96.5
-
ns
tf
Fall time
-
8
-
ns
Table 9: Source drain diode
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
ISD
Source-drain current
-
34
A
ISDM
(1)
Source-drain current
(pulsed)
-
136
A
VSD
(2)
Forward on voltage
VGS = 0 V, ISD = 34 A
-
1.6
V
trr
Reverse recovery time
ISD = 34 A,
di/dt = 100 A/µs,
VDD = 60 V (see Figure 22:
"Switching time waveform")
-
438
ns
Qrr
Reverse recovery charge
-
9
µC
IRRM
Reverse recovery current
-
41.5
A
trr
Reverse recovery time
ISD = 34 A,
di/dt = 100 A/µs,
VDD = 60 V, Tj = 150 °C
(see Figure 22: "Switching
time waveform")
-
538
ns
Qrr
Reverse recovery charge
-
12
µC
IRRM
Reverse recovery current
-
44.5
A
Notes:
(1)
Pulse width is limited by safe operating area
(2)
Pulsed: pulse duration = 300 µs, duty cycle 1.5%



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