STTH3BCF060 datasheet(3/8 Pages) STMICROELECTRONICS

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STTH3BCF060

Characteristics

Doc ID 17524 Rev 2

3/8

Figure 1.

Conduction losses versus average

current

Figure 2.

Forward voltage drop versus

forward current

Figure 3.

Relative variation of thermal

impedance junction ambient versus

pulse duration

Figure 4.

Peak reverse recovery current

versus dIF/dt (typical values)

Figure 5.

Reverse recovery time versus dIF/dt

(typical values)

Figure 6.

Reverse recovery charges versus

dIF/dt (typical values)

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.0

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

P(W)

δ=tp/T

δ = 0.05

δ = 1

δ = 0.1

(A)

F(AV)

δ = 0.5

δ = 0.2

0.00.5

1.0

1.5

2.0

2.53.03.5

4.0

(A)

(V)

T =150°C

(typical values)

T =25°C

(maximum values)

T =150°C

(maximum values)

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.E-01

1.E+00

1.E+01

1.E+02

1.E+03

Z/R

th(j-a)

t (s)

SMB

= 1cm

Single pulse

100

150

200

250

300

350

400

450

500

(A)

dI /dt(A/µs)

I =2 x I

F(AV)

I=I

F(AV)

I =0.5 x I

F(AV)

I =0.25 x I

F(AV)

V =400V

T =125°C

100

110

120

130

140

150

160

100

150

200

250

300

350

400

450

500

t (ns)

I=I

F(AV)

I =0.5 x I

F(AV)

I =2 x I

F(AV)

V =400V

T =125°C

dI /dt(A/µs)

100

150

200

250

300

350

400

450

100

150

200

250

300

350

400

450

500

Q (nC)

I =2 x I

F(AV)

I=I

F(AV)

I =0.5 x I

F(AV)

V =400V

T =125°C

dI /dt(A/µs)

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