STPSC30H12C datasheet(1/9 Pages) STMICROELECTRONICS

tên linh kiện	STPSC30H12C

Giải thích chi tiết về linh kiện	Robust high voltage periphery

PDF	9 Pages

Scroll/Zoom	100%

nhà sản xuất	STMICROELECTRONICS [STMicroelectronics]

Trang chủ	http://www.st.com

Logo

1 / 9 page

February 2017

DocID030339 Rev 1

1/9

This is information on a product in full production.

www.st.com

STPSC30H12C

1200 V power Schottky silicon carbide diode

Datasheet - production data

Features



No or negligible reverse recovery



Switching behavior independent of

temperature



Robust high voltage periphery



Operating Tj from -40 °C to 175 °C



ECOPACK®2 compliant

Description

The SiC diode, available in TO-247 LL, is an

ultrahigh performance power Schottky rectifier. It

is manufactured using a silicon carbide substrate.

The wide band-gap material allows the design of

a low VF Schottky diode structure with a 1200 V

rating. Due to the Schottky construction, no

recovery is shown at turn-off and ringing patterns

are negligible. The minimal capacitive turn-off

behavior is independent of temperature.

Especially suited for use in PFC and secondary

side applications, this ST SiC diode will boost the

performance in hard switching conditions. This

rectifier will enhance the performance of the

targeted application. Its high forward surge

capability ensures a good robustness during

transient phases.

Table 1: Device summary

Symbol

Value

IF(AV)

2 x 15 A

VRRM

1200 V

Tj (max.)

175 °C

VF (typ.)

1.35 V

K

A1

A2

TO-247 LL

K

A2

A1

Số phần tương tự - STPSC30H12C

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
STMicroelectronics	STPSC30G065	659Kb / 10P	650 V, 30 A high surge silicon carbide power Schottky diode 25-Sep-2025
	STPSC30G065-Y	661Kb / 10P	Automotive 650 V, 30 A high surge silicon carbide power Schottky diode 17-Sep-2025
	STPSC30G065L2Y	567Kb / 11P	Automotive 650 V, 30 A high surge silicon carbide power Schottky diode 24-Jun-2025
	STPSC30G065W	659Kb / 10P	650 V, 30 A high surge silicon carbide power Schottky diode 25-Sep-2025
	STPSC30G065WLY	661Kb / 10P	Automotive 650 V, 30 A high surge silicon carbide power Schottky diode 17-Sep-2025

More results

Mô tả tương tự - STPSC30H12C

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
Everlight Electronics C...	EHP-B05	1Mb / 27P	Robust package with high lumens
STMicroelectronics	RT2901H	749Kb / 11P	RobuST high-temperature low-power quad voltage comparators 08-Oct-2014
STMicroelectronics	RT2903H	253Kb / 11P	RobuST low-power dual voltage comparators 08-Oct-2014
TT Electronics.	CDR	322Kb / 3P	Robust terminations
Maxim Integrated Produc...	MAX17525	586Kb / 20P	Robust, High-Power Protection Reduces System Rev 0; 6/16
Taoglas antenna solutio...	GA.110.101111	2Mb / 12P	Robust High Strength Super Magnet Mount
STMicroelectronics	STPSC15H12-Y	408Kb / 8P	Robust high voltage periphery 05-Jan-2017
	STPSC20H12-Y	532Kb / 10P	Robust high voltage periphery 23-Jan-2017
	STPSC40H12C	430Kb / 10P	Robust high voltage periphery 28-Feb-2017
SunLED Corporation	XZFBBA05C	291Kb / 4P	Robust package

More results

STPSC30H12C bảng dữ liệu(PDF) 1 Page - STMicroelectronics

STPSC30H12C bảng dữ liệu(HTML) 1 Page - STMicroelectronics

Số phần tương tự - STPSC30H12C

Mô tả tương tự - STPSC30H12C

Html Pages

1 2 3 4 5 6 7 8 9

bảng dữ liệu tải về

Link URL