STPSC12C065-Y datasheet(1/8 Pages) STMICROELECTRONICS

tên linh kiện	STPSC12C065-Y

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This is information on a product in full production.

January 2015

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STPSC12C065-Y

Automotive 650 V power Schottky silicon carbide diode

Datasheet

- production data

Features

• No or negligible reverse recovery

• Switching behavior independent of

temperature

• Dedicated to PFC applications

• High forward surge capability

• AEC-Q101 qualified

• PPAP capable

• ECOPACK®2 compliant component

Description

The SiC diode is an ultrahigh performance power

Schottky diode. It is manufactured using a silicon

carbide substrate. The wide band gap material

allows the design of a Schottky diode structure

with a 650 V rating. Due to the Schottky

construction, no recovery is shown at turn-off and

ringing patterns are negligible. The minimal

capacitive turn-off behavior is independent of

temperature and is ideal for automotive

applications.

Especially suited for use as boost diode, this

rectifier will enhance the performance in hard

switching conditions. Its high forward surge

capability ensures a good robustness during

transient phases.

Table 1. Device summary

Symbol

Value

IF(AV)

12 A

VRRM

650 V

Tj (max)

175 °C

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