STPS30L30DJF datasheet(3/7 Pages) STMICROELECTRONICS

tên linh kiện	STPS30L30DJF

Giải thích chi tiết về linh kiện	High efficiency power Schottky diode

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STPS30L30DJF

Characteristics

Doc ID 022946 Rev 1

3/7

Figure 1.

Average forward power dissipation

versus average forward current

Figure 2.

Average forward current versus

ambient temperature (

δ = 0.5)

PF(AV)(W)

IF(AV)(A)

δ=tp/T

δ=0.05

δ=0.1

δ=0.2

δ=0.5

δ=1

IF(AV)(A)

100

125

150

Rth(j -a)=Rth(j-c)

δ=tp/T

Tamb(°C)

Figure 3.

Normalized avalanche power

derating versus pulse duration

Figure 4.

Normalized avalanche power

derating versus junction

temperature

0.001

0.01

0.1

0.01

0.1

100

1000

t (µs)

P(t )

(1µs)

ARM p

ARM

0.2

0.4

0.6

0.8

1.2

100

125

150

T (°C)

(25°C)

ARM (Tj)

ARM

Figure 5.

Relative variation of thermal

impedance, junction to case,

versus pulse duration

Figure 6.

Reverse leakage current versus

reverse voltage applied

(typical values)

Zth(j-c)/Rth(j-c)

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.E-05

1.E-04

1.E-03

1.E-02

1.E-01

1.E+00

Single pulse

tp(s)

IR(mA)

1.E-02

1.E-01

1.E+00

1.E+01

1.E+02

1.E+03

Tj =150°C

Tj=125°C

Tj=25°C

Tj=100°C

Tj=75°C

Tj=50°C

VR(V)

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