STPS10L25 datasheet(3/12 Pages) STMICROELECTRONICS

3 / 12 page

STPS10L25

Characteristics

DocID3619 Rev 5

3/12

1.1

Characteristics (curves)

Figure 1: Average forward power dissipation

versus average forward current

Figure 2: Average forward current versus ambient

temperature (δ = 0.5)

Figure 3: Normalized avalanche power deratings

versus pulse duration (Tj = 125 °C)

Figure 4: Relative variation of thermal impedance

junction to case versus pulse duration

Figure 5: Reverse leakage current versus reverse

voltage applied (typical values)

Figure 6: Junction capacitance versus reverse

voltage applied (typical values)

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.0

δ = 1

δ = 0.5

δ = 0.2

δ = 0.1

δ = 0.05

δ= tp/T

PF(AV)(W)

IF(AV)(A)

Rth(j-a)=50°C/W

Rth(j-a) = Rth(j-c)

Tamb(°C)

δ = tp/T

IF(AV)(A)

100

125

150

(tp)

(10 µs)

ARM

0.001

0.01

0.1

100

1000

t (µs)

1. 0E -4

1. 0E -3

1. 0E -2

1. 0E -1

1. 0E +0

0. 0

0. 2

0. 4

0. 6

0. 8

1. 0

= tp/T

Zth(j-c)/Rth(j-c)

δ = 0.1

δ = 0.5

δ = 0.2

Single pulse

tp(s)

1E-2

1E-1

1E+0

1E+1

1E+2

5E+2

IR(mA)

Tj = 125 °C

Tj = 25 °C

Tj = 150 °C

VR(V)

0.1

1.0

5.0

VR(V)

C(nF)

F = 1MHz

Tj = 25 °C

STPS10L25 bảng dữ liệu(PDF) 3 Page - STMicroelectronics

STPS10L25 bảng dữ liệu(HTML) 3 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12

bảng dữ liệu tải về

Link URL