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STM32F303RB bảng dữ liệu(PDF) 81 Page - STMicroelectronics

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STM32F303RB bảng dữ liệu(HTML) 81 Page - STMicroelectronics

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STM32F303xB STM32F303xC
Electrical characteristics
124
6.3.9
PLL characteristics
The parameters given in Table 46 are derived from tests performed under ambient
temperature and supply voltage conditions summarized in Table 24.
6.3.10
Memory characteristics
Flash memory
The characteristics are given at TA = –40 to 105 °C unless otherwise specified.
Table 46. PLL characteristics
Symbol
Parameter
Value
Unit
Min
Typ
Max
fPLL_IN
PLL input clock(1)
1. Take care of using the appropriate multiplier factors so as to have PLL input clock values compatible with
the range defined by fPLL_OUT.
1(2)
-24(2)
MHz
PLL input clock duty cycle
40(2)
-60(2)
%
fPLL_OUT
PLL multiplier output clock
16(2)
-72
MHz
tLOCK
PLL lock time
-
-
200(2)
µs
Jitter
Cycle-to-cycle jitter
-
-
300(2)
2. Guaranteed by design.
ps
Table 47. Flash memory characteristics
Symbol
Parameter
Conditions
Min
Typ
Max(1)
1. Guaranteed by design.
Unit
tprog
16-bit programming time TA = –40 to +105 °C
40
53.5
60
µs
tERASE Page (2 KB) erase time
TA = –40 to +105 °C
20
-
40
ms
tME
Mass erase time
TA = –40 to +105 °C
20
-
40
ms
IDD
Supply current
Write mode
-
-
10
mA
Erase mode
-
-
12
mA
Table 48. Flash memory endurance and data retention
Symbol
Parameter
Conditions
Value
Unit
Min(1)
1. Guaranteed by characterization results.
NEND
Endurance
TA = –40 to +85 °C (6 suffix versions)
TA = –40 to +105 °C (7 suffix versions)
10
kcycles
tRET
Data retention
1 kcycle(2) at TA = 85 °C
2. Cycling performed over the whole temperature range.
30
Years
1 kcycle(2) at TA = 105 °C
10
10 kcycles(2) at TA = 55 °C
20



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