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SIP41111 bảng dữ liệu(PDF) 2 Page - Vishay Siliconix |
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SIP41111 bảng dữ liệu(HTML) 2 Page - Vishay Siliconix |
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2 / 10 page ![]() www.vishay.com 2 Document Number: 74292 S-61214–Rev. A, 17-Jul-06 Vishay Siliconix SiP41111 BLOCK DIAGRAMS Notes: a. All voltages are referenced to ground unless otherwise specified. b. Device mounted with all leads soldered or welded to PC board. c. Derate 6.5 mW/°C above + 70 °C. d. Derate 25 mW/°C above + 70 °C. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. LEVEL SHIFT UNDER VOLTAGE V HI LI V HB HO HS LO SS DD ABSOLUTE MAXIMUM RATINGS Parameter Limit Unit Supply Voltage, VDD, VHB-VHS a - 0.3 to 14 V LI and HI Voltagea - 0.3 to VDD + 0.3 Voltage on LOa - 0.3 to VDD + 0.3 Voltage on HOa VHS - 0.3 to VHB + 0.3 Voltage on HSa Continuous - 1 to + 89 Voltage on HBa VDD = 12 V + 89 Average Current in VDD to HB diode 100 mA ESD Classification Class 1 1 kV THERMAL INFORMATION Parameter Limit Unit Thermal Resistance (Typical) θJA SOICb 153 °C/W SOIC (PowerPak)b 40 Max Power Dissipation at 70 °C in Free Air (SOIC)c 522 mW at 70 °C in Free Air (SOIC PowerPAK)d 2.0 W Junction Temperature Range - 65 to 150 °C Storage Temperature Range - 55 to 150 RECOMMENDED OPERATING RANGE Parameter Limit Unit Supply Voltage VDD + 9 to 13.2 V Voltage on HS - 1 to 75 Voltage on HB VHS + 8 to VHS + 13.2 and VDD - 1 to VDD + 75 |
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