SIP21110 datasheet(2/12 Pages) VISHAY

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Document Number: 69921

S09-1046-Rev. C, 08-Jun-09

Vishay Siliconix

SiP21110

Notes:

a. Derate 5.5 mW/°C above TA = 70 °C.

b. Device mounted with all leads soldered or welded to multilayer 1S2P PC board.

c. Soldering for 5 s.

Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating/conditions for extended periods may affect device reliability.

ABSOLUTE MAXIMUM RATINGS

Parameter

Limit

Unit

Input Voltage, VIN to GND

- 0.3 to 6.5

VEN (See Detailed Description)

- 0.3 to 6.5

Output Current (IOUT)

Short Circuit Protected

Output Voltage (VOUT)

- 0.3 to VIN + 0.3

Package Power Dissipation (PD)

305

Package Thermal Resistance (

JA)

180

°C/W

Maximum Junction Temperature, TJ(max)

125

°C

Storage Temperature, TSTG

- 65 to 150

Lead Temperature, TL

260

RECOMMENDED OPERATING RANGE

Parameter

Limit

Unit

Input Voltage, VIN

2.2 to 6

Operating Ambient Temperature TA

- 40 to 85

°C

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