SCHOTTKY DIE SPECIFICATION

TYPE: MBR240

40 V

2 A (Low Ir)

Single Anode

SYM

Die Sort UNIT

DC Blocking Voltage:

Ir=1mA(for wafer form)

VRRM

42.5

Volt

Ir=0.5mA (for dice form)

IFAV

Amp

VF MAX

0.48

Volt

IR MAX

0.08

mA

Cj MAX

pF

IFSM

Amp

Tj

°C

TSTG

°C

Specification apply to die only. Actual performance may degrade when assembled.

MEMT does not guarantee device performance after assembly.

Data sheet information is subjected to change without notice.

DIM

um

2

Mil

2

A

1245

49.01

B

1025

40.3

C

1203

41.1

D

254

10

305

12

Micro-Electro-Magnetical Tech Co.

General Description:

ELECTRICAL CHARACTERISTICS

Spec. Limit

40

Average Rectified Forward Current

2

Maximum Instantaneous Forward Voltage

@ 2 Amperes, Ta=25°C

0.55

Maximum Instantaneous Reverse Voltage

VR= 40 Volt, Ta=25°C

0.1

Maximum Junction Capacitance @ 0V, 1MHZ

MAXIMUM RATINGS

Nonrepetitive Peak Surge Current

60

Operating Junction Temperature

-65 to +150

Storage Temperatures

-65 to +150

DICE OUTLINE DRAWING

ITEM

Die Size

Top Metal Pad Size

Passivation Seal

Thickness (Min)

Thickness (Max)

PS:

(1)Cutting street width is around 80um(3.14mil).

(2)Both of top-side and back-side metals are Ti/Ni/Ag.

B

C

A

Top-side Metal

D

SiO2 Passivation

Back-side Metal