IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:

4,835,592

4,881,106

5,017,508

5,049,961

5,187,117

5,486,715

4,850,072

4,931,844

5,034,796

5,063,307

5,237,481

5,381,025

IXYS reserves the right to change limits, test conditions, and dimensions.

Symbol

Test Conditions

Characteristic Values

(T

min.

typ.

max.

g

fs

I

C

= I

10

S

Pulse test, t

≤ 300 µs, duty cycle ≤ 2 %

C

ies

3100

pF

C

oes

V

CE

= 25 V, V

240

pF

C

res

30

pF

Q

g

100

nC

Q

ge

I

C

= I

30

nC

Q

gc

38

nC

t

d(on)

30

ns

t

ri

30

ns

t

d(off)

30N60B

150

270

ns

30N60C

90

150

ns

t

fi

30N60B

140

270

ns

30N60C

70

120

ns

E

off

30N60B

1.5

2.5

mJ

30N60C

0.7

1.2

mJ

t

d(on)

35

ns

t

ri

35

ns

E

on

0.5

mJ

t

d(off)

30N60B

270

ns

30N60C

150

ns

t

fi

30N60B

250

ns

30N60C

140

E

off

30N60B

2.5

mJ

30N60C

1.2

mJ

R

thJC

0.62 K/W

R

thCK

(TO-247)

0.25

K/W

Inductive load, T

°°°°C

I

C

= I

V

CE

= 0.8 V

Note 1

TO-247 AD Outline

Inductive load, T

°°°°C

I

C

= I

V

CE

= 0.8 V

Note 1

IXSH/IXST 30N60B

IXSH/IXST 30N60C

Notes: 1. Switching times may increase for V

V

increased R

1 = Gate

2 = Collector

3 = Emitter

Tab = Collector

TO-268 Outline

Min Recommended Footprint