HFU2N60F / HFD2N60F

600V N-Channel MOSFET

Oct 2016

Parameter

Value

Unit

600

V

2A

3.6

6.5

nC

Key Parameters

Features

unless otherwise specified

Symbol

Parameter

Value

Unit

V

DSS

Drain-Source Voltage

600

V

I

D

Drain Current

– Continuous (T

)

2.0 *

A

Drain Current

– Continuous (T

)

1.3 *

A

I

DM

Drain Current

– Pulsed

(Note 1)

8.0 *

A

V

GS

Gate-Source Voltage

30

V

E

AS

Single Pulsed Avalanche Energy

(Note 2)

110

mJ

I

AR

Avalanche Current

(Note 1)

2.0

A

E

AR

Repetitive Avalanche Energy

(Note 1)

4.2

mJ

dv/dt

Peak Diode Recovery dv/dt

(Note 3)

4.5

V/ns

P

D

Power Dissipation (T

)*

2.5

W

Power Dissipation (T

)

- Derate above 25

42

W

0.34

W/

T

Operating and Storage Temperature Range

-55 to +150

T

L

Maximum lead temperature for soldering purposes,

1/8” from case for 5 seconds

300

Symbol

Parameter

Value

Unit

R

JC

Junction-to-Case, Max.

2.98

/W

R

JA

Junction-to-Ambient (minimum pad of 2 oz copper), Max.

110

/W

R

JA

50

/W

Thermal Resistance Characteristics

HFU2N60F

TO-251

HFD2N60F

TO-252

Symbol

G

D

S

G

D

S

Originative New Design

Very Low Intrinsic Capacitances

Excellent Switching Characteristics

100% Avalanche Tested

RoHS Compliant

* Drain current limited by maximum junction temperature