20ETFS datasheet(2/7 Pages) VISHAY

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Document Number: 93141

Revision: 22-Oct-08

20ETF..S Soft Recovery Series

Vishay High Power Products

Fast Soft Recovery

Rectifier Diode, 20 A

Note

(1) When mounted on 1" square (650 mm2) PCB of FR-4 or G-10 material 4 oz. (140 µm) copper 40 °C/W

For recommended footprint and soldering techniques refer to application note #AN-994

ELECTRICAL SPECIFICATIONS

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES

UNITS

Maximum forward voltage drop

VFM

20 A, TJ = 25 °C

1.31

Forward slope resistance

TJ = 150 °C

11.88

Threshold voltage

VF(TO)

0.93

Maximum reverse leakage current

IRM

TJ = 25 °C

VR = Rated VRRM

0.1

TJ = 150 °C

RECOVERY CHARACTERISTICS

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES

UNITS

Reverse recovery time

trr

IF at 20 Apk

25 A/µs

25 °C

400

Reverse recovery current

Irr

6.1

Reverse recovery charge

Qrr

1.7

µC

Snap factor

Typical

0.6

dir

RM(REC)

THERMAL - MECHANICAL SPECIFICATIONS

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES

UNITS

Maximum junction and storage

temperature range

TJ, TStg

- 40 to 150

°C

Maximum thermal resistance,

junction to case

RthJC

DC operation

0.9

°C/W

Maximum thermal resistance,

junction to ambient (PCB mount)

RthJA (1)

Soldering temperature

240

°C

Approximate weight

0.07

oz.

Marking device

Case style D2PAK (SMD-220)

20ETF08S

20ETF10S

20ETF12S

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