MSB92ASWT1G datasheet(1/5 Pages) ONSEMI

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December, 2010 − Rev. 5

1

Publication Order Number:

MSB92ASWT1/D

MSB92ASWT1G,

MSB92AS1WT1G

PNP Silicon General

Purpose High Voltage

Transistor

This PNP Silicon Planar Transistor is designed for general purpose

amplifier applications. This device is housed in the SC-70/SOT-323

package which is designed for low power surface mount applications.

Features

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

MAXIMUM RATINGS (TA = 25°C)

Rating

Symbol

Value

Unit

Collector-Base Voltage

V(BR)CBO

−300

Vdc

Collector-Emitter Voltage

V(BR)CEO

−300

Vdc

Emitter-Base Voltage

V(BR)EBO

−5.0

Vdc

Collector Current − Continuous

IC

500

mAdc

ESD Rating:

Human Body Model

Machine Model

ESD

Class 1C

Class C

−

THERMAL CHARACTERISTICS

Rating

Symbol

Max

Unit

Power Dissipation (Note 1)

PD

150

mW

Junction Temperature

TJ

150

°C

Storage Temperature Range

Tstg

−55 to +150

°C

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. Device mounted on a FR-4 glass epoxy printed circuit board using the

minimum recommended footprint.

Device

Package

Shipping†

ORDERING INFORMATION

COLLECTOR

3

1

BASE

2

EMITTER

MSB92ASWT1G

SC−70

(Pb−Free)

3000/Tape & Reel

http://onsemi.com

MSB92AS1WT1G

SC−70

(Pb−Free)

3000/Tape & Reel

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

SC−70 (SOT−323)

CASE 419

STYLE 3

MARKING DIAGRAM

3

1

2

Dx

= Device Code

M

= Date Code*

G

= Pb−Free Package

D3 M G

G

1

(Note: Microdot may be in either location)

*Date Code orientation may vary depending

upon manufacturing location.

D5 M G

G

1

MSB92ASWT1G

MSB92AS1WT1G

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