GSD2004WS-G

www.vishay.com

Vishay Semiconductors

Rev. 1.2, 27-Sep-16

1

Document Number: 85415

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

Small Signal Switching Diode, High Voltage

MECHANICAL DATA

Case: SOD-323

Weight: approx. 4 mg

Packaging codes/options:

18/10K per 13

" reel (8 mm tape), 10K/box

08/3K per 7

" reel (8 mm tape), 15K/box

FEATURES

• Silicon epitaxial planar diode

• Fast switching diode, especially suited for

applications requiring high voltage capability

• AEC-Q101 qualified

• Base P/N-G3 - green, commercial grade

• Base P/N-HG3 - green, AEC-Q101 qualified

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(part number available on request)

• Material categorization:

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for definitions of compliance please see

www.vishay.com/doc?99912

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Note

PARTS TABLE

PART

ORDERING CODE

INTERNAL CONSTRUCTION

TYPE MARKING

REMARKS

GSD2004WS-G

GSD2004WS-G3-08 or GSD2004WS-G3-18

Single diode

B7

Tape and reel

GSD2004WS-HG3-08 or GSD2004WS-HG3-18

PARAMETER

TEST CONDITION

SYMBOL

VALUE

UNIT

Continuous reverse voltage

240

V

Repetitive peak reverse voltage

300

V

Forward current (continuous)

225

mA

Peak repetitive forward current

625

mA

Non-repetitive peak forward current

4A

1A

200

mW

PARAMETER

TEST CONDITION

SYMBOL

VALUE

UNIT

Typical thermal resistance junction to

650

K/W

Junction temperature

150

°C

Storage temperature range

-65 to +150

°C

Operating temperature range

-55 to +150

°C