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LMX2353TM bảng dữ liệu(PDF) 3 Page - National Semiconductor (TI)

[Old version datasheet] Texas Instruments acquired National semiconductor.
tên linh kiện LMX2353TM
Giải thích chi tiết về linh kiện  PLLatinum??Fractional N Single 2.5 GHz Frequency Synthesizer
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Absolute Maximum Ratings (Notes 1, 2)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
Power Supply Voltage
V
CC
−0.3V to 6.5V
Vp
−0.3V to 6.5V
Voltage on any pin with
GND = 0V (V
I)
−0.3V to V
CC +0.3V
Storage Temperature Range (T
S)
−65˚C to +150˚C
Lead Temperature (solder, 4 sec.) (T
L)
+260˚C
ESD - Human Body Model (Note 2)
2 kV
Recommended Operating
Conditions
Power Supply Voltage
V
CC
2.7V to 5.5V
Vp
V
CC to 5.5V
Operating Temperature (T
A)
−40˚C to +85˚C
Note 1: Absolute Maximum Ratings indicate limits beyond which damage to
the device may occur. Operating Ratings indicate conditions for which the de-
vice is intended to be functional, but do not guarantee specific performance
limits. For guaranteed specifications and test conditions, see the Electrical
Characteristics. The guaranteed specifications apply only for the test condi-
tions listed.
Note 2: This device is a high performance RF integrated circuit and is ESD
sensitive. Handling and assembly of this device should only be done at ESD
free workstations.
Electrical Characteristics (V
CC = Vp = 3.0V; −40˚C < TA < 85˚C except as specified).
Symbol
Parameter
Conditions
Value
Unit
Min
Typ
Max
GENERAL
I
CC
Power Supply Current
4.5
mA
I
CC-PWDN
Power Down Current
CE = LOW
5
µA
f
IN
RF Operating Frequency
(Note 3)
0.5
2.5
GHz
f
OSC
Oscillator Frequency
(Note 3)
2
50
MHz
f
φ
Phase Detector Frequency
10
MHz
Pf
IN
RF Input Sensitivity
V
CC = 3.0V
−15
0
dBm
V
CC = 5.0V
−10
0
dBm
V
OSC
Oscillator Sensitivity
OSC
IN
0.5
V
CC
V
PP
CHARGE PUMP
ICP
o-source
Charge Pump Output Current
VCP
o = Vp/2,
CP_WORD = 0000
−100
µA
ICP
o-sink
VCP
o = Vp/2,
CP_WORD = 0000
100
µA
ICP
o-source
VCP
o = Vp/2,
CP_WORD = 1111
−1.6
mA
ICP
o-sink
VCP
o = Vp/2,
CP_WORD = 1111
1.6
mA
ICP
o-TRI
Charge Pump TRI-STATE
Current
0.5
≤ VCP
o ≤ Vp − 0.5,
−40˚C < T
A < 85˚C
500
pA
ICP
o-sink vs
ICP
o-source
CP Sink vs Source Mismatch
VCP
o = Vp/2, TA = 25˚C
3
%
ICP
o vs
VCP
o
CP Current vs Voltage
0.5
≤ VCP
o ≤ Vp − 0.5, TA = 25˚C
8
%
ICP
o vs T
CP Current vs Temperature
VCP
o = Vp/2, −40˚C < TA < 85˚C
8
%
VOLTAGE DOUBLER
V
D-ON
Voltage Doubler Turn on Time
OSC
IN = 10 MHz, Cext = 0.1 µF
V
P Settled to within ± 10%
TBD
µs
V
CPO
Charge Pump Output Voltage
2.7V
≤ V
CC ≤ 3.3V,
Doubler Enabled
2xV
CC
− 1.0
V
V
P DOUBLER
Doubler Voltage at V
P Pin
2.7V
≤ V
CC ≤ 3.3V,
Doubler Enabled
2xV
CC
− 0.5
V
DIGITAL INTERFACE (DATA, CLK, LE, EN, F
oLD)
V
IH
High-Level Input Voltage
(Note 4)
0.8 x
V
CC
V
V
IL
Low-Level Input Voltage
(Note 4)
0.2 x
V
CC
V
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