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LMV931MF bảng dữ liệu(PDF) 3 Page - National Semiconductor (TI)

[Old version datasheet] Texas Instruments acquired National semiconductor. Click here to check the latest version.
tên linh kiện LMV931MF
Giải thích chi tiết về linh kiện  1.8V, RRIO Operational Amplifiers
PDF  19 Pages
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nhà sản xuất  NSC [National Semiconductor (TI)]
Trang chủ  http://www.national.com
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LMV931MF bảng dữ liệu(HTML) 3 Page - National Semiconductor (TI)

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1.8V DC Electrical Characteristics (Continued)
Unless otherwise specified, all limits guaranteed for T
J = 25˚C. V
+ = 1.8V, V − = 0V, V
CM =V
+/2, V
O =V
+/2 and
R
L > 1M
Ω. Boldface limits apply at the temperature extremes. See (Note 10)
Symbol
Parameter
Condition
Min
(Note 6)
Typ
(Note 5)
Max
(Note 6)
Units
V
O
Output Swing
R
L = 600
Ω to 0.9V
V
IN = ±100mV
1.65
1.63
1.72
V
0.077
0.105
0.120
R
L =2k
Ω to 0.9V
V
IN = ±100mV
1.75
1.74
1.77
0.024
0.035
0.04
I
O
Output Short Circuit Current
Sourcing, V
O =0V
V
IN = 100mV
4
3.3
8
mA
Sinking, V
O = 1.8V
V
IN = −100mV
7
5
9
1.8V AC Electrical Characteristics
Unless otherwise specified, all limits guaranteed for T
J = 25˚C. V
+ = 1.8V, V − = 0V, V
CM =V
+/2, V
O =V
+/2 and R
L > 1M
Ω.
Boldface limits apply at the temperature extremes. See (Note 10)
Symbol
Parameter
Conditions
Min
(Note 6)
Typ
(Note 5)
Max
(Note 6)
Units
SR
Slew Rate
(Note 7)
0.35
V/µs
GBW
Gain-Bandwidth Product
1.4
MHz
Φ
m
Phase Margin
67
deg
G
m
Gain Margin
7dB
e
n
Input-Referred Voltage Noise
f = 1kHz, V
CM = 0.5V
60
i
n
Input-Referred Current Noise
f = 1kHz
0.06
THD
Total Harmonic Distortion
f = 1kHz, A
V =+1
R
L = 600
Ω,V
IN =1 VPP
0.023
%
Amp-to-Amp Isolation
(Note 9)
123
dB
2.7V DC Electrical Characteristics
Unless otherwise specified, all limits guaranteed for T
J = 25˚C. V
+ = 2.7V, V − = 0V, V
CM =V
+/2, V
O =V
+/2 and
R
L > 1M
Ω. Boldface limits apply at the temperature extremes. See (Note 10)
Symbol
Parameter
Condition
Min
(Note 6)
Typ
(Note 5)
Max
(Note 6)
Units
V
OS
Input Offset Voltage
LMV931 (Single)
1
4
6
mV
LMV932 (Dual)
LMV934 (Quad)
1
5.5
7.5
mV
TCV
OS
Input Offset Voltage Average
Drift
5.5
µV/˚C
I
B
Input Bias Current
15
35
50
nA
I
OS
Input Offset Current
8
25
40
nA
I
S
Supply Current (per channel)
105
190
210
µA
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