1 - 2

© 2000 IXYS All rights reserved

Symbol

Test Conditions

Maximum Ratings

V

DSS

T

J

= 25

°C to 150°C

200

V

V

DGR

T

J

= 25

°C to 150°C; R

200

V

V

GS

Continuous

±20

V

V

GSM

Transient

±30

V

I

D25

T

C

= 25

°C (MOSFET chip capability)

105

A

I

D(RMS)

External lead (current limit)

76

A

I

DM

T

C

= 25

°C, Note 1

480

A

I

AR

T

C

= 25

°C

120

A

E

AR

T

C

= 25

°C60

mJ

E

AS

T

C

= 25

°C3

J

dv/dt

I

S

£ I

5

V/ns

T

J

£ 150°C, R

P

D

T

C

= 25

°C

400

W

T

J

-55 ... +150

°C

T

JM

150

°C

T

stg

-55 ... +150

°C

T

L

1.6 mm (0.063 in.) from case for 10 s

300

°C

V

ISOL

50/60 Hz, RMS

t = 1 min

2500

V~

Weight

5g

Symbol

Test Conditions

Characteristic Values

(T

min.

typ.

max.

V

DSS

V

200

V

V

GS(th)

V

2.0

4.0 V

I

GSS

V

GS

=

±20 V, V

±100 nA

I

DSS

V

DS

= V

DSS

T

J

= 25

°C

100

mA

V

T

R

DS(on)

V

17 m

W

Note 2

Single MOSFET Die

98586A (11/99)

G

D

Advanced Technical Information

(Electrically Isolated Back Surface)

Features

• Silicon chip on Direct-Copper-Bond

substrate

- High power dissipation

- Isolated mounting surface

- 2500V electrical isolation

• Low drain to tab capacitance(<25pF)

• Low R

• Rugged polysilicon gate cell structure

• Unclamped Inductive Switching (UIS)

rated

• Fast intrinsic Rectifier

Applications

• DC-DC converters

• Battery chargers

• Switched-mode and resonant-mode

power supplies

• DC choppers

• AC motor control

Advantages

• Easy assembly

• Space savings

• High power density

• Low noise to ground

G = Gate

D = Drain

S = Source

* Patent pending

Isolated back surface*

IXFR 120N20

V

DSS

= 200

V

I

D25

= 105

A

R

17 m

W

t

E153432

IXYS reserves the right to change limits, test conditions, and dimensions.