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DB201S bảng dữ liệu(PDF) 1 Page - Galaxy Semi-Conductor Holdings Limited

tên linh kiện DB201S
Giải thích chi tiết về linh kiện  SILICON BRIDGE RECTIFIERS
PDF  3 Pages
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nhà sản xuất  BILIN [Galaxy Semi-Conductor Holdings Limited]
Trang chủ  http://www.galaxycn.com
Logo BILIN - Galaxy Semi-Conductor Holdings Limited

DB201S bảng dữ liệu(HTML) 1 Page - Galaxy Semi-Conductor Holdings Limited

  DB201S Datasheet HTML 1Page - Galaxy Semi-Conductor Holdings Limited DB201S Datasheet HTML 2Page - Galaxy Semi-Conductor Holdings Limited DB201S Datasheet HTML 3Page - Galaxy Semi-Conductor Holdings Limited  
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Production specification
SILICON BRIDGE RECTIFIERS
DB201S--DB207S
Document Number:DFS702AA
www.gmicroelec.com
1
FEATURES
Rating to 1000V PRVP
Surge overload rating to 60 Amperes peak
Ideal for printed circuit board
Reliable low cost construction utilizing molded
plastic technique results in inexpensive product
Lead solderable per MIL-STD-202 method 208
Glass passivated chip junctions
Plastic material has UL flammability classification94V-O
Maximum Ratings (@TA = 25°C unless otherwise specified)
Characteristic
Symbol
DB201S
DB202S
DB203S
DB204S
DB205S
DB206S
DB207S
UNITS
Peak Repetitive Reverse Voltage
VRRM
50
100
200
400
600
800
1000
V
RMS Reverse Voltage
VRMS
35
75
140
280
420
560
700
V
DC Blocking Voltage
VDC
50
100
200
400
600
800
1000
V
Maximum average forward Output current
@TA=25℃
IF(AV)
2.0
A
Peak forward surge current
8.3ms single half-sine-wave
superimposed on rated load
IFSM
60
A
Thermal Characteristics
Characteristic
Symbol
DB201S
DB202S
DB203S
DB204S
DB205S
DB206S
DB207S
UNITS
Typical thermal resistance per leg
R ΘJA
R ΘJC
RθJL
60
30
25
℃
/W
Operating junction temperature range
TJ
- 55 ---- + 150
℃
Storage temperature range
TSTG
- 55 ---- + 150
℃
Electrical Characteristics (@TA = 25°C unless otherwise specified)
Characteristic
Symbol
DB201S
DB202S
DB203S
DB204S
DB205S
DB206S
DB207S
UNITS
Maximum instantaneous forward voltage
at 2.0 A
VF
1.1
V
Maximum reverse current @TA=25℃
at rated DC blocking voltage @TA=125℃
IR
10
100
μ A
Pb
Lead-free


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