NSVBAT54HT1G datasheet(2/4 Pages) ONSEMI

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Giải thích chi tiết về linh kiện	Schottky Barrier Diodes

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ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

Reverse Breakdown Voltage

(IR = 10 μA)

V(BR)R

−

Total Capacitance

(VR = 1.0 V, f = 1.0 MHz)

−

7.6

Reverse Leakage

(VR = 25 V)

−

0.5

2.0

μAdc

Forward Voltage

(IF = 0.1 mA)

(IF = 1.0 mA)

(IF = 10 mA)

(IF = 30 mA)

(IF = 100 mA)

−

0.22

0.29

0.35

0.41

0.52

0.24

0.32

0.40

0.50

0.80

Reverse Recovery Time

(IF = IR = 10 mAdc, IR(REC) = 1.0 mAdc) Figure 1

trr

−

5.0

Notes: 1. A 2.0 k

Ω variable resistor adjusted for a Forward Current (IF) of 10 mA.

Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA.

Notes: 3. tp » trr

+10 V

2 k

820

0.1

μF

DUT

100

μH

0.1

μF

Ω Output

Pulse

Generator

Ω Input

Sampling

Oscilloscope

10%

90%

trr

iR(REC) = 1 mA

OUTPUT PULSE

(IF = IR = 10 mA; measured

at iR(REC) = 1 mA)

INPUT SIGNAL

Figure 1. Recovery Time Equivalent Test Circuit

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