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LP3995 bảng dữ liệu(PDF) 6 Page - National Semiconductor (TI)

[Old version datasheet] Texas Instruments acquired National semiconductor. Click here to check the latest version.
tên linh kiện LP3995
Giải thích chi tiết về linh kiện  Micropower 150mA CMOS Voltage Regulator with Active Shutdown
PDF  14 Pages
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nhà sản xuất  NSC [National Semiconductor (TI)]
Trang chủ  http://www.national.com
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Electrical Characteristics (Continued)
Unless otherwise noted, V
EN = 1.5, VIN =VOUT + 1.0V, CIN = 1 µF, IOUT = 1 mA, COUT = 1 µF, cBP = 0.01 µF. Typical values
and limits appearing in normal type apply for T
J = 25˚C. Limits appearing in boldface type apply over the full temperature
range for operation, −40 to +125˚C. (Notes 14, 15)
Symbol
Parameter
Conditions
Typical
Limit
Units
Min
Max
DEVICE OUTPUT: 2.5
≤ V
OUT
≤ 3.3V
∆V
OUT
Output Voltage Tolerance
I
OUT =1mA
-2
2
%of
V
OUT(NOM)
−3
3
Line Regulation Error
V
IN =(VOUT(NOM)+1.0V) to 6.0V,
I
OUT =1mA
−0.1
0.1
%/V
micro SMD
Load Regulation Error
I
OUT =1mAto150 mA
0.0004
0.002
%/mA
LLP
Load Regulation Error
I
OUT =1mAto150 mA
0.002
0.005
%/mA
Dropout Voltage
I
OUT =1mA
0.4
2
mV
I
OUT = 150 mA
60
100
PSRR
Power Supply Rejection Ratio
(Note 11)
f = 1 kHz, I
OUT =1mA
60
dB
f = 10 kHz, I
OUT =1mA
50
FULL V
OUT RANGE
I
LOAD
Load Current
(Notes 10, 11)
0
µA
I
Q
Quiescent Current
V
EN = 1.5V, IOUT =0mA
85
150
µA
V
EN = 1.5V, IOUT = 150 mA
140
200
V
EN = 0.4V
0.003
1.5
I
SC
Short Circuit Current Limit
450
mA
E
N
Output Noise Voltage ((Note 11)) BW = 10 Hz to 100 kHz,
V
IN = 4.2V, IOUT = 1mA
25
µVrms
T
SHUTDOWN
Thermal Shutdown
Temperature
160
˚C
Hysteresis
20
ENABLE CONTROL CHARACTERISTICS
I
EN
Maximum Input Current at
V
EN Input
V
EN = 0.0V and VIN = 6.0V
0.001
µA
V
IL
Low Input Threshold
0.4
V
V
IH
High Input Threshold
0.9
V
TIMING CHARACTERISTICS
T
ON
Turn On Time (Note 11)
To 95% Level (Note 12)
30
µs
T
OFF
Turn Off Time (Note 11)
To 5% Level (Note 13)
175
µs
Note 3: Absolute Maximum Ratings are limits beyond which damage to the device may occur. Operating Ratings are conditions under which operation of the device
is guaranteed. Operating Ratings do not imply guaranteed performance limits. For guaranteed performance limits and associated test conditions, see the Electrical
Characteristics tables.
Note 4: All voltages are with respect to the potential at the GND pin.
Note 5: For information regarding micro SMD and LLP packages please refer to the following application notes;
AN-1112 Micro SMD Package Wafer Level Chip Scale Package,
AN-1187. Leadless Leadframe Package.
Note 6: Internal Thermal shutdown circuitry protects the device from permanent damage.
Note 7: In applications where high power dissipation and/or poor thermal resistance is present, the maximum ambient temperature may have to be derated.
Maximum ambient temperature (TA(max)) is dependant on the maximum operating junction temperature (TJ(max-op)), the maximum power dissipation (PD(max)), and
the junction to ambient thermal resistance in the application (
θJA). This relationship is given by :-
T
A(max) =TJ(max-op) −(PD(max) x
θ
JA)
Note 8: Junction to ambient thermal resistance is highly dependant on the application and board layout. In applications where high thermal dissipation is possible,
special care must be paid to thermal issues in the board design.
Note 9: The human body model is an 100 pF discharge through a 1.5 k
Ω resistor into each pin. The machine model is a 200 pF capacitor discharged directly into
each pin.
Note 10: The device maintains a stable, regulated output voltage without load.
Note 11: This electrical specification is guaranteed by design.
Note 12: Time from VEN = 0.9V to VOUT = 95% (VOUT(NOM))
Note 13: Time from VEN = 0.4V to VOUT =5%(VOUT(NOM))
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