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công cụ tìm kiếm bảng dữ liệu linh kiện điện tử |
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công cụ tìm kiếm bảng dữ liệu linh kiện điện tử |
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LMH6504MA bảng dữ liệu(PDF) 2 Page - National Semiconductor (TI) |
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LMH6504MA bảng dữ liệu(HTML) 2 Page - National Semiconductor (TI) |
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2 / 19 page  Absolute Maximum Ratings (Note 1) If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/ Distributors for availability and specifications. ESD Tolerance (Note 4): Human Body 1000V Machine Model 100V Input Current ±10 mA Output Current 120 mA (Note 3) Supply Voltages (V + -V−) 12.6V Voltage at Input/ Output pins V + +0.8V, V− −0.8V Storage Temperature Range −65˚C to 150˚C Junction Temperature 150˚C Soldering Information: Infrared or Convection (20 sec) 235˚C Wave Soldering (10 sec) 260˚C Operating Ratings (Note 1) Supply Voltages (V + -V−) 7Vto12V Operating Temperature Range −40˚C to +85˚C Thermal Resistance: ( θ JC)( θ JA) 8 -Pin SOIC 60 165 8-Pin MSOP 65 235 Electrical Characteristics(Note 2) Unless otherwise specified, all limits guaranteed for T J = 25˚C, VS = ±5V, AVMAX = 9.7 V/V, RF =1k Ω,R G = 100 Ω,V IN = ±0.1V, R L = 100 Ω,V G = +2V. Boldface limits apply at the temperature extremes. Symbol Parameter Conditions Min (Note 6) Typ (Note 6) Max (Note 6) Units Frequency Domain Response BW -3dB Bandwidth V OUT < 1VPP 150 MHz V OUT < 4VPP,AVMAX = 100 58 GF Gain Flatness V OUT < 1VPP 0.9V ≤ V G ≤ 2V, ±0.2 dB 40 MHz Att Range Flat Band (Relative to Max Gain) Attenuation Range (Note 13) ±0.2 dB Flatness, f < 30 MHz 26 dB ±0.1 dB Flatness, f < 30 MHz 9.5 BW Control Gain control Bandwidth V G = 1V (Note 12) 150 MHz CT (dB) Feed-through V G = 0V, 30 MHz (Output/Input) −53 dB GR Gain Adjustment Range f < 10 MHz 80 dB f < 30 MHz 73 Time Domain Response t r,tf Rise and Fall Time 0.5V Step 2.1 ns OS % Overshoot 20 % SR Slew Rate (Note 5) 4V Step, Non Inverting 800 V/µs 4V Step, Inverting 1500 Distortion & Noise Performance HD2 2 nd Harmonic Distortion 2V PP, 20 MHz −47 dBc HD3 3 rd Harmonic Distortion –55 THD Total Harmonic Distortion −45 En tot Total Equivalent Input Noise f > 1 MHz, R SOURCE =50 Ω 4.4 nV/ I N Input Noise Current f > 1 MHz 2.6 pA/ DG Differential Gain f = 4.43 MHz, R L = 100 Ω 0.45 % DP Differential Phase 0.13 deg www.national.com 2 |
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