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LMH6504 bảng dữ liệu(PDF) 2 Page - National Semiconductor (TI)

[Old version datasheet] Texas Instruments acquired National semiconductor. Click here to check the latest version.
tên linh kiện LMH6504
Giải thích chi tiết về linh kiện  Wideband, Low Power, Variable Gain Amplifier
PDF  19 Pages
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nhà sản xuất  NSC [National Semiconductor (TI)]
Trang chủ  http://www.national.com
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LMH6504 bảng dữ liệu(HTML) 2 Page - National Semiconductor (TI)

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Absolute Maximum Ratings (Note 1)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
ESD Tolerance (Note 4):
Human Body
1000V
Machine Model
100V
Input Current
±10 mA
Output Current
120 mA (Note 3)
Supply Voltages (V
+ -V)
12.6V
Voltage at Input/ Output pins
V
+ +0.8V, V−0.8V
Storage Temperature Range
−65˚C to 150˚C
Junction Temperature
150˚C
Soldering Information:
Infrared or Convection (20 sec)
235˚C
Wave Soldering (10 sec)
260˚C
Operating Ratings (Note 1)
Supply Voltages (V
+ -V)
7Vto12V
Operating Temperature Range
−40˚C to +85˚C
Thermal Resistance:
(
θ
JC)(
θ
JA)
8 -Pin SOIC
60
165
8-Pin MSOP
65
235
Electrical Characteristics(Note 2)
Unless otherwise specified, all limits guaranteed for T
J = 25˚C, VS = ±5V, AVMAX = 9.7 V/V, RF =1k
Ω,R
G = 100
Ω,V
IN =
±0.1V, R
L = 100
Ω,V
G = +2V. Boldface limits apply at the temperature extremes.
Symbol
Parameter
Conditions
Min
(Note 6)
Typ
(Note 6)
Max
(Note 6)
Units
Frequency Domain Response
BW
-3dB Bandwidth
V
OUT < 1VPP
150
MHz
V
OUT < 4VPP,AVMAX = 100
58
GF
Gain Flatness
V
OUT < 1VPP
0.9V
≤ V
G
≤ 2V, ±0.2 dB
40
MHz
Att Range
Flat Band (Relative to Max Gain)
Attenuation Range (Note 13)
±0.2 dB Flatness, f < 30 MHz
26
dB
±0.1 dB Flatness, f < 30 MHz
9.5
BW
Control
Gain control Bandwidth
V
G = 1V (Note 12)
150
MHz
CT (dB)
Feed-through
V
G = 0V, 30 MHz
(Output/Input)
−53
dB
GR
Gain Adjustment Range
f < 10 MHz
80
dB
f < 30 MHz
73
Time Domain Response
t
r,tf
Rise and Fall Time
0.5V Step
2.1
ns
OS %
Overshoot
20
%
SR
Slew Rate (Note 5)
4V Step, Non Inverting
800
V/µs
4V Step, Inverting
1500
Distortion & Noise Performance
HD2
2
nd Harmonic Distortion
2V
PP, 20 MHz
−47
dBc
HD3
3
rd Harmonic Distortion
–55
THD
Total Harmonic Distortion
−45
En tot
Total Equivalent Input Noise
f > 1 MHz, R
SOURCE =50
4.4
nV/
I
N
Input Noise Current
f > 1 MHz
2.6
pA/
DG
Differential Gain
f = 4.43 MHz, R
L = 100
0.45
%
DP
Differential Phase
0.13
deg
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