MBD301G datasheet(1/5 Pages) ONSEMI

tên linh kiện	MBD301G

Giải thích chi tiết về linh kiện	Silicon Hot-Carrier Diodes

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October, 2016 − Rev. 8

1

Publication Order Number:

MBD301/D

MBD301G,

MMBD301LT1G,

MMBD301LT3G,

SMMBD301LT3G

Silicon Hot-Carrier Diodes

Schottky Barrier Diodes

These devices are designed primarily for high−efficiency UHF and

VHF detector applications. They are readily adaptable to many other

fast switching RF and digital applications. They are supplied in an

inexpensive plastic package for low−cost, high−volume consumer

and industrial/commercial requirements. They are also available in a

Surface Mount package.

Features

• Extremely Low Minority Carrier Lifetime − 15 ps (Typ)

• Very Low Capacitance − 1.5 pF (Max) @ VR = 15 V

• Low Reverse Leakage − IR = 13 nAdc (Typ) MBD301, MMBD301

• S Prefix for Automotive and Other Applications Requiring Unique

Site and Control Change Requirements; AEC−Q101 Qualified and

PPAP Capable

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Reverse Voltage

VR

30

V

Forward Current (DC)

IF

200 (Max)

mA

Total Device Dissipation

@ TA = 25°C

MBD301G

MMBD301LT1G, MMBD301LT3G,

SMMBD301LT3G

Derate above 25

°C

MBD301G

MMBD301LT1G, MMBD301LT3G,

SMMBD301LT3G

PF

280

200

2.8

2.0

MW

mW/

°C

Operating Junction

Temperature Range

TJ

−55 to

+125

°C

Storage Temperature Range

Tstg

−55 to

+150

°C

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

See detailed ordering and shipping information in the package

dimensions section on page 2 of this data sheet.

ORDERING INFORMATION

30 VOLTS

SILICON HOT−CARRIER

DETECTOR AND SWITCHING

DIODES

SOT−23 (TO−236)

CASE 318

STYLE 8

3

CATHODE

1

ANODE

2

CATHODE

1

ANODE

TO−92 2−Lead

CASE 182

STYLE 1

SOT−23

TO−92

MARKING DIAGRAMS

*Date Code orientation and/or overbar may vary

depending upon manufacturing location.

1

4T M

G

A

= Assembly Location

Y

= Year

W

= Work Week

4T

= Device Code (SOT−23)

M

= Date Code*

G

= Pb−Free Package

(Note: Microdot may be in either location)

MBD

301

AYW

G

SOT−23

TO−92

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Số phần tương tự - MBD301G

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
ON Semiconductor	MBD301G	65Kb / 5P	Silicon Hot?묬arrier Diodes SCHOTTKY Barrier Diodes January, 2007 ??Rev. 4
	MBD301G	135Kb / 5P	Silicon Hot-Carrier Diodes August, 2009 ??Rev. 5
	MBD301G	237Kb / 7P	Silicon Hot-Carrier Diodes Schottky Barrier Diodes March, 2018 - Rev. 9
	MBD301G	237Kb / 7P	Silicon Hot-Carrier Diodes Schottky Barrier Diodes March, 2018 - Rev. 9

More results

Mô tả tương tự - MBD301G

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
Leshan Radio Company	MBD701	54Kb / 2P	Silicon Hot-Carrier Diodes
	MMBD301LT1	54Kb / 2P	Silicon Hot-Carrier Diodes Schottky Barrier Diodes
	MMDL301T1	118Kb / 3P	Silicon Hot-Carrier Diodes
ON Semiconductor	MMDL301	39Kb / 4P	Silicon Hot-Carrier Diodes January, 2000 ??Rev. 0
Leshan Radio Company	LMBD301LT1	87Kb / 3P	Silicon Hot-Carrier Diodes Schottky Barrier Diodes
Leshan Radio Company	LMBD301LT1G	110Kb / 3P	Silicon Hot-Carrier Diodes Schottky Barrier Diodes
ON Semiconductor	MBD701	128Kb / 4P	Silicon Hot-Carrier Diodes Schottky Barrier Diodes March, 2009 ??Rev. 5
	MBD301G	135Kb / 5P	Silicon Hot-Carrier Diodes August, 2009 ??Rev. 5
	MMDL301T1G	94Kb / 3P	Silicon Hot-Carrier Diodes September, 2010??Rev. 2
	MBD701	94Kb / 5P	Silicon Hot-Carrier Diodes October, 2016 ??Rev. 7

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