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CY7C1069GN bảng dữ liệu(PDF) 9 Page - Cypress Semiconductor

tên linh kiện CY7C1069GN
Giải thích chi tiết về linh kiện  16-Mbit (2M 횞 8) Static RAM
PDF  15 Pages
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nhà sản xuất  CYPRESS [Cypress Semiconductor]
Trang chủ  http://www.cypress.com
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CY7C1069GN bảng dữ liệu(HTML) 9 Page - Cypress Semiconductor

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CY7C1069GN
Document Number: 002-00046 Rev. *A
Page 9 of 15
Figure 7. Write Cycle No. 1 (CE Controlled) [19, 20, 21, 22]
Figure 8. Write Cycle No. 2 (WE Controlled, OE LOW) [19, 20, 21, 22]
Switching Waveforms (continued)
tHD
tSD
tSCE
tSA
tHA
tAW
tPWE
tWC
DATA IO
ADDRESS
CE
WE
DATA IN VALID
tHD
tSD
tSCE
tHA
tAW
tPWE
tWC
tSA
tLZWE
tHZWE
DATA I/O
ADDRESS
CE
WE
DATA IN VALID
Notes
19. CE is a shorthand combination of both CE1 and CE2 combined. It is active LOW.
20. Data I/O is high impedance if OE = VIH.
21. If CE goes HIGH simultaneously with WE going HIGH, the output remains in a high impedance state.
22. The internal write time of the memory is defined by the overlap of WE = VIL, CE = VIL. These signals must be LOW to initiate a write, and the HIGH transition of any
of these signals can terminate the operation. The input data setup and hold timing should be referenced to the edge of the signal that terminates the write.



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