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CY7C1069GN bảng dữ liệu(PDF) 9 Page - Cypress Semiconductor |
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CY7C1069GN bảng dữ liệu(HTML) 9 Page - Cypress Semiconductor |
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9 / 15 page ![]() CY7C1069GN Document Number: 002-00046 Rev. *A Page 9 of 15 Figure 7. Write Cycle No. 1 (CE Controlled) [19, 20, 21, 22] Figure 8. Write Cycle No. 2 (WE Controlled, OE LOW) [19, 20, 21, 22] Switching Waveforms (continued) tHD tSD tSCE tSA tHA tAW tPWE tWC DATA IO ADDRESS CE WE DATA IN VALID tHD tSD tSCE tHA tAW tPWE tWC tSA tLZWE tHZWE DATA I/O ADDRESS CE WE DATA IN VALID Notes 19. CE is a shorthand combination of both CE1 and CE2 combined. It is active LOW. 20. Data I/O is high impedance if OE = VIH. 21. If CE goes HIGH simultaneously with WE going HIGH, the output remains in a high impedance state. 22. The internal write time of the memory is defined by the overlap of WE = VIL, CE = VIL. These signals must be LOW to initiate a write, and the HIGH transition of any of these signals can terminate the operation. The input data setup and hold timing should be referenced to the edge of the signal that terminates the write. |
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