PIC16C84A datasheet(71/117 Pages) MICROCHIP

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DS30081F-page 71

PIC16C8X

Applicable Devices 83 R83 84 84A R84

11.0

ELECTRICAL CHARACTERISTICS FOR PIC16C84

Absolute Maximum Ratings †

Ambient temperature under bias.............................................................................................................-55

°C to +125°C

Storage temperature .............................................................................................................................. -65

°C to +150°C

Voltage on VDD with respect to VSS ............................................................................................................... 0 to +7.5V

Voltage on MCLR with respect to VSS (Note 2).................................................................................................0 to +14V

Voltage on all other pins with respect to VSS .................................................................................. -0.6V to (VDD + 0.6V)

Total power dissipation (Note 1)...........................................................................................................................800 mW

Maximum current out of VSS pin ...........................................................................................................................150 mA

Maximum current into VDD pin ..............................................................................................................................100 mA

Input clamp current, IIK (VI < 0 or VI > VDD)

.....................................................................................................................± 20 mA

Output clamp current, IOK (V0 < 0 or V0 >VDD)

...............................................................................................................± 20 mA

Maximum output current sunk by any I/O pin..........................................................................................................25 mA

Maximum output current sourced by any I/O pin ....................................................................................................20 mA

Maximum current sunk by PORTA ..........................................................................................................................80 mA

Maximum current sourced by PORTA .....................................................................................................................50 mA

Maximum current sunk by PORTB........................................................................................................................150 mA

Maximum current sourced by PORTB...................................................................................................................100 mA

Note 1: Power dissipation is calculated as follows: Pdis = VDD x {IDD -

∑ IOH} + ∑ {(VDD-VOH) x IOH} + ∑(VOl x IOL)

Note 2: Voltage spikes below VSS at the MCLR pin, inducing currents greater than 80 mA, may cause latch-up.

Thus, a series resistor of 50-100

Ω should be used when applying a “low” level to the MCLR pin rather than

pulling this pin directly to VSS.

TABLE 11-1:

CROSS REFERENCE OF DEVICE SPECS FOR OSCILLATOR CONFIGURATIONS

AND FREQUENCIES OF OPERATION (COMMERCIAL DEVICES)

† NOTICE: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the

device. This is a stress rating only and functional operation of the device at those or any other conditions above those

indicated in the operation listings of this speciﬁcation is not implied. Exposure to maximum rating conditions for

extended periods may affect device reliability.

OSC

PIC16C84-04

PIC16C84-10

PIC16LC84-04

VDD: 4.0V to 6.0V

IDD:

4.5 mA max. at 5.5V

IPD:

100

µA max. at 4.0V WDT dis

Freq: 4.0 MHz max.

VDD: 4.5V to 5.5V

IDD:

1.8 mA typ. at 5.5V

IPD:

40.0

µA typ. at 4.5V WDT dis

Freq: 4.0 MHz max.

VDD: 2.0V to 6.0V

IDD:

4.5 mA typ. at 5.5V

IPD:

100

µA typ. at 4V WDT dis

Freq: 2.0 MHz max.

VDD: 4.0V to 6.0V

IDD:

4.5 mA max. at 5.5V

IPD:

100

µA max. at 4.0V WDT dis

Freq: 4.0 MHz max.

VDD: 4.5V to 5.5V

IDD:

1.8 mA typ. at 5.5V

IPD:

40.0

µA typ. at 4.5V WDT dis

Freq: 4.0 MHz max.

VDD: 2.0V to 6.0V

IDD:

4.5 mA typ. at 5.5V

IPD:

100

µA typ. at 4V WDT dis

Freq: 2.0 MHz max.

VDD: 4.5V to 5.5V

IDD:

4.5 mA typ. at 5.5V

IPD:

40.0

µA typ. at 4.5V WDT dis

Freq: 4.0 MHz max.

VDD: 4.5V to 5.5V

IDD:

10 mA max. at 5.5V typ.

Freq: 10 MHz max.

Do not use in HS mode

VDD: 4.0V to 6.0V

IDD:

µA typ. at 32 kHz, 2.0V

IPD:

µA typ. at 2.0V WDT dis

Freq: 200 kHz max.

Do not use in LP mode

VDD: 2.0V to 6.0V

IDD:

400

µA max. at 32 kHz, 2.0V

IPD:

100

µA max. at 4.0V WDT dis

Freq: 200 kHz max.

The shaded sections indicate oscillator selections which are tested for functionality, but not for MIN/MAX speciﬁcations. It is

recommended that the user select the device type that ensures the speciﬁcations required.

IPD:

40.0

µA typ. at 4.5V WDT dis

Thi d

t d

ith F

M k

4 0 4

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